1D Simulation of Oxidation-Enhanced and Oxidation-Retarded Diffusion in Silicon and Validity of the Physical Model. Transition to the 2D Case-Reference-Cited by-同舟云学术

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1D Simulation of Oxidation-Enhanced and Oxidation-Retarded Diffusion in Silicon and Validity of the Physical Model. Transition to the 2D Case

Published:1986-02-16 Issue:2 Volume:93 Page:523-533
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Scheid E.,Chenevier P.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Process design using two-dimensional process and device simulators

2. Présentation et validation du programme OSIRIS de simulation bidimensionnelle des processus technologiques

3. , and , Proc. 14th European Solid State Device Research Conf., Ed. Europ. Phys. Soc., Lille 1984 (p. 178).

4. VLSI Process modeling—SUPREM III

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1. Defect-impurity engineering in implanted silicon;Physics-Uspekhi;2003-08-31

2. Model for the recombination velocity of silicon interstitials at nonoxidizing interfaces;Journal of Applied Physics;1998-12-15

3. Point Defects, Diffusion and Gettering in Silicon;MRS Proceedings;1997

4. Consistent quantitative model for the spatial extent of point defect interactions in silicon;Journal of Applied Physics;1995-11

5. Oxidation enhanced diffusion of boron in silicon at 650–750 °C using steam in the range 1–15 atmospheres;Journal of Applied Physics;1995-09

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