Thermodynamic model and epitaxial growth of cdse layers-Reference-Cited by-同舟云学术

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Thermodynamic model and epitaxial growth of cdse layers

Published:1974-04-16 Issue:2 Volume:22 Page:593-597
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Ratcheva-Stambolieva T. M.,Krasulin G. A.,Tchistyakov Yu. D.,Dragieva I. D.,Djoglev D. H.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Growth of epitaxial CdSe upon sapphire

2. and , Selenium and Selenids, Izd. Nauka, Moscow/Leningrad 1964 (p. 18).

3. , , , , , and , Course on Physical Chemistry, Izd. Khimia, Moscow 1970 (pp. 294, 572).

4. Condensated and Evaporated Solids, New York/London 1964 (p. 417).

5. private communication.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial growth of CdSe on ZnTe (111);Physica Status Solidi (a);1977-11-16

2. Photovoltaic properties ofn‐CdSe/p‐ZnTe heterojunctions;Applied Physics Letters;1976-05-15

3. Epitaxy;Semiconducting Devices;1976

4. The epitaxial growth of ZnSe on sapphire substrates;Physica Status Solidi (a);1975-06-16

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