The epitaxial growth of ZnSe on sapphire substrates-Reference-Cited by-同舟云学术

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The epitaxial growth of ZnSe on sapphire substrates

Published:1975-06-16 Issue:2 Volume:29 Page:579-585
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Ratcheva T. M.,Dragieva I. D.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. The Epitaxy of ZnSe on Ge, GaAs, and ZnSe by an HCl Close-Spaced Transport Process

2. Philips Gloeilampenfabriken, Patent Netherlands, Appl. No. 6607800 (Cl.B 01j) (1967).

3. Conf. Luminescence, Budapest 1966 (p. 20).

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2. Growth of AgGaTe2 Layers by a Closed-Space Sublimation Method;Journal of Electronic Materials;2013-01-26

3. Optical properties of ZnSe on GaN (0001) grown by MBE;Journal of Crystal Growth;2009-03

4. Preparation and characterization of close-spaced vapour transport thin films of ZnSe for heterojunction solar cells;Thin Solid Films;1985-05

5. Dislocation etch pits in anhydrous diglycine sulfate;Crystal Research and Technology;1982

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