The calculation of the depletion layer width of a metal–semiconductor contact with one deep level-Reference-Cited by-同舟云学术

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The calculation of the depletion layer width of a metal–semiconductor contact with one deep level

Published:1975-06-16 Issue:2 Volume:29 Page:511-515
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Schrader L.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference3 articles.

1. Vereinfachte und erweiterte Theorie der Randschicht-gleichrichter

2. Zur Randschichttheorie der Trockengleichrichter

3. The calculation of the depletion layer width of a metal-semiconductor contact including the charge of the majority carriers

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low contact resistance of NiGeSn on n-GeSn;Solid-State Electronics;2024-01

2. Schottky Diodes;Semiconducting Devices;1976

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