Field effect on real GaAs surfaces
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference36 articles.
1. Magnetoconductance Oscillations ofn-Type Inversion Layers in InSb Surfaces
2. Quantized Surface States of a Narrow-Gap Semiconductor
3. Subband Structures of N-Channel Inversion Layers on III–V Compounds –A Possibility of the Gate Controlled Gunn Effect–
4. Spectroscopy of electron subband levels in an inversion layer on InSb
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1. Characteristics of Si3N4/GaAs metal-lnsulator-semiconductor interfaces with coherent Si/Al0.3Ga0.7As interlayers;Journal of Electronic Materials;1997-09
2. Metal–insulator–semiconductor structure on GaAs using a pseudomorphic Si/GaP interlayer;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-03
3. Si3N4/Si/In0.05Ga0.95As/n–GaAs metal–insulator–semiconductor devices;Journal of Applied Physics;1997-01
4. Interface properties of Si3N4Si/n-GaAs metal-msulator-semiconductor structure using a Si interlayer;Philosophical Magazine B;1996-09
5. Characteristics of in situ deposited GaAs metal-insulator-semiconductor structures;Solid-State Electronics;1995-07
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