Doping inhomogeneities and compensation in n-type LEC InP wafers
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Electron mobility and free‐carrier absorption in GaAs: Determination of the compensation ratio
2. Determination of carrier concentration and compensation microprofiles in GaAs
3. Electron mobility and free-carrier absorption in InP; determination of the compensation ratio
4. Microinhomogeneities of donor and acceptor distributions in n-type LEC-GaAs from free-carrier infrared absorption
5. Advances in LEC growth of InP crystals
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Origin of infrared contrasts in InP: S and problems of optical transmission mapping;Physica Status Solidi (a);1991-09-16
2. Inhomogeneities in n-Type and Semi-Insulating InP Crystals Studied by Photoluminescence Topography and Raman Scattering;Physica Status Solidi (a);1991-08-16
3. Lattice parameter variation in inp related to the dopant element and doping level;Crystal Research and Technology;1990-04
4. Lateral Distribution of Si-Related Defects and Carrier Density in GaAs Crystals;Physica Status Solidi (a);1989-01-16
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