On the sensitivity of the EBIC technique as applied to defect investigations in silicon-Reference-Cited by-同舟云学术

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On the sensitivity of the EBIC technique as applied to defect investigations in silicon

Published:1981-08-16 Issue:2 Volume:66 Page:573-583
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Kittler M.,Seifert W.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. , and , Scanning Electron Microscopy, Vol. I, Iitri, Chicago 1976 (p. 529).

2. On the influence of microdefects on charge carriers in silicon

3. On the characterization of electrically active inhomogeneities in semiconductor silicon by charge collection at schottky barriers using the SEM-EBIC (I). Fundamentals and contrast due to macroscopical inhomogeneities

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