Investigation of defects influencing performance of type-II InAs/GaInSb superlattice based infrared PIN type photodetectors-Reference-Cited by-同舟云学术

Investigation of defects influencing performance of type-II InAs/GaInSb superlattice based infrared PIN type photodetectors

Published:2019-06-07 Issue:21 Volume:125 Page:214503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Maximenko Sergey I.¹^ORCID,Bassim Nabil D.²,Aifer Edward H.¹,Jackson Eric M.¹,Nolde Jill A.¹^ORCID,Affouda Chaffra A.¹^ORCID,Canedy Chadwick L.¹,Vurgaftman Igor¹,Meyer Jerry R.¹

Affiliation:

1. Naval Research Laboratory, Washington, DC 20375, USA

2. McMaster University, Hamilton, Ontario L8S 4L8, Canada

Funder

Office of Naval Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5086441

Reference36 articles.

1. Controlling dark current in type-II superlattice photodiodes

2. Passivation of type-II InAs∕GaSb double heterostructure

3. Evaluating the size-dependent quantum efficiency loss in a SiO2-Y2O3 hybrid gated type-II InAs/GaSb long-infrared photodetector array

4. Surface conductivity of InAs/GaSb superlattice infrared detectors treated with thiolated self assembled monolayers

5. Reticulated shallow etch mesa isolation for controlling surface leakage in GaSb-based infrared detectors

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1. Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform;Scientific Reports;2022-07-08

2. Interface investigation of InAs/GaSb type II superlattice for long wavelength infrared photodetectors;Infrared Physics & Technology;2021-03

3. Flexible GaAs photodetector arrays hetero-epitaxially grown on GaP/Si for a low-cost III-V wearable photonics platform;Optics Express;2020-11-17