Thermal activation energies of undoped semi-insulating LEC GaAs. Correlation of TDH and TSC results-Reference-Cited by-同舟云学术

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Thermal activation energies of undoped semi-insulating LEC GaAs. Correlation of TDH and TSC results

Published:1988-08-16 Issue:2 Volume:108 Page:689-697
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Siegel W.,Witte H.,Kühnel G.,Schneider H. A.,Flande T.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Compensation mechanisms in GaAs

2. Ed. and , Semiconductors and Semimetals, Vol. 19, in: Academic Press, 1984 (p. 76).

3. Some Properties of Semi‐Insulating and Si‐Implanted GaAs

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1. Influence of defect inhomogeneities on the Hall mobility and concentration in undoped GaAs;Journal of Applied Physics;1998-08-15

2. Enhancement of the Hall mobility in undoped GaAs with low carrier concentration by light excitation;Applied Physics Letters;1997-03-31

3. Charge Redistribution and Potential Barrier Reconstruction in SI GaAs Caused by EL2 State Change;Journal de Physique I;1996-09

4. Interaction of deep levels and potential fluctuations in scattering and recombination phenomena in semi‐insulating GaAs;Journal of Applied Physics;1996-08-15

5. Influence of the EL2 → EL2* transition on photoconductivity and thermally stimulated processes in semi-insulating GaAs;Physica Status Solidi (a);1991-10-16

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