Investigation of thermal donors generated in Cz-Si crystals by prolonged annealing at temperatures below 550 °C-Reference-Cited by-同舟云学术

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Investigation of thermal donors generated in Cz-Si crystals by prolonged annealing at temperatures below 550 °C

Published:1991-10-16 Issue:2 Volume:127 Page:405-414
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Babich V. M.,Baran N. P.,Dotsenko Yu. P.,Zotov K. I.,Kovalchuk V. B.,Maksimenko V. M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Mechanism of the Formation of Donor States in Heat-Treated Silicon

2. Infrared-Absorption of Thermal Donors in Silicon

3. Nature of thermal donors in silicon crystals

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical and Structural Properties of Oxygen-Containing Silicon Annealed at 670-720 K Under High Stress;Advanced Engineering Materials;2002-08-06

2. Effect of silicon microstructure on stress-stimulated creation of thermal donors;SPIE Proceedings;2001-08-10

3. Application of High Temperature—Pressure Treatment for Investigation of Defect Creation in Basic. Materials of Modern Microelectronics: Czochralski Silicon and Silicon Containing Films;Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials;2001

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