Application of High Temperature—Pressure Treatment for Investigation of Defect Creation in Basic. Materials of Modern Microelectronics: Czochralski Silicon and Silicon Containing Films
Publisher
Springer Netherlands
Reference24 articles.
1. Misiuk, A and Zaumseil, P (1995) Hydrostatic pressure treatment techniques for investigation of semiconductor defect structure, Proceed ESC/ESSDERC Symposium ALTECH 95, Electrochemical Soc Proceed 95-30, 194–203 2. Misiuk, A, Zaumseil, P, Antonova, I V, Bak-Misiuk, J, Bugiel, E, Hartwig, J, Romano-Rodriguez, A (1997) Defects in pressure—annealed Cz-S1 and S1Ge/S1, in J Donecker and I Rechenberg (eds), Proceed Conf DRIP VII, Templin, Germany, Institute of Physics Conf Ser No 160, pp 273–276 3. Jung, J (1984) High-pressure-induced defect formation in silicon single crystals II Mechanism of stress-field formation at precipitates, Phil Mag A, 50, 257–274 4. Misiuk, A, Jung, W, Surma, B, Jun, J and Rozental, M (1997) Effect of stress induced defects on electrical properties of Czochralski grown silicon, Solid State Phenomena 57-58, 393–398 5. Dzelme, J, Ertsinsh, I., Zapol, B, Misiuk, A (1999) Structure of oxygen and silicon interstitials in silicon, phys stat sol (a) 171, 197–201
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
|
|