Interfacial tunnel interaction in MOS elements in depletion
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. A new method to characterize border traps in submicron transistors using hysteresis in the drain current;IEEE Transactions on Electron Devices;2003-04
2. Degradation Study of Ultra-thin JVD Silicon Nitride Mnsfets;MRS Proceedings;2002
3. THERMAL OXIDATION OF SILICON AND Si-SiO2 INTERFACE MORPHOLOGY, STRUCTURE AND LOCALIZED STATES;Handbook of Surfaces and Interfaces of Materials;2001
4. Etude par pompage de, charge des défauts induits à l'interface Si-SiO2par rayonnements ionisants;Journal de Physique III;1994-09
5. Characterization, modeling, and minimization of transient threshold voltage shifts in MOSFETs;IEEE Journal of Solid-State Circuits;1994-03
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