Mobility—Lifetime Products of a-Si:H Prepared at High Deposition Rate with Triethylboron-Reference-Cited by-同舟云学术

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Mobility—Lifetime Products of a-Si:H Prepared at High Deposition Rate with Triethylboron

Published:1993-03-16 Issue:1 Volume:136 Page:171-180
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Böhme T.,Kluge G.,Kottwitz A.,Bindemann R.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. in: Semiconductors and Semimetals, Vol. 21, Part C, Chap. 7, Ed. Academic Press, New York 1984.

2. Semiconductors, Cambridge University Press, London 1978.

3. Boron doped a-SiCx:H films from B(C2H5)3SiH4

4. Steady‐state photocarrier grating technique for diffusion length measurement in photoconductive insulators

5. Solution of the μτ problem in a-Si: H

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2. Steady-State Photocarrier Grating Method;Advanced Characterization Techniques for Thin Film Solar Cells;2011-04-07

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