Boron doped a-SiCx:H films from B(C2H5)3SiH4
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Alternative doped a-Si1−C :H and nc-Si1−C :H films;Journal of Non-Crystalline Solids;1998-05
2. Mobility—Lifetime Products of a-Si:H Prepared at High Deposition Rate with Triethylboron;Physica Status Solidi (a);1993-03-16
3. Defect Density of a-Si: H(B) Prepared at High Deposition Rate with Triethylboron;Physica Status Solidi (a);1992-11-16
4. The doping of a-Si:H with liquid boron and phosphorus sources;MRS Proceedings;1992
5. Environmentally nonpolluting boron doping of a-Si1−xCx:H with a liquid boron source;Journal of Non-Crystalline Solids;1991-01
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