Misfit dislocations in modulation-doped In0.2Ga0.8As/GaAs strained multilayer structures
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. On the origin of misfit dislocations in InGaAs/GaAs strained layers
2. A new type of misfit dislocation multiplication process in InxGa1−xAs/GaAs strained-layer superlattices
3. The study of misfit dislocations in InxGa1-xAs/GaAs strained quantum well structures
4. Growth of InxGa1−xAs on GaAs (001) by molecular beam epitaxy
5. Inst. Phys. Conf. Ser. No. 104, 245 (1989).
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Correlation between the critical layer thickness and the decaytime constant of RHEED oscillations in strained In Ga1−As/GaAs structures;Thin Solid Films;2000-05
2. Inhomogeneous sources of misfit dislocation generation in In xGa1− xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy;Micron;1997-08
3. Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy;Applied Physics Letters;1997-06-09
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