The Effect of Annealing on the Defect Structure and Electrical Properties of Deformed Single Crystals of Ge-Reference-Cited by-同舟云学术

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The Effect of Annealing on the Defect Structure and Electrical Properties of Deformed Single Crystals of Ge

Published:1983-09-16 Issue:1 Volume:79 Page:47-55
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Aristov V. V.,Osipyan Yu A.,Scholz R.,Snighireva I. I.,Khodos I. I.,Shevciienko S. A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Investigations of dislocation strain fields using weak beams

2. The dissociation of dislocations in silicon

3. Dissociated dislocations in Germanium

4. Extended dislocations in germanium

5. Investigation of dislocation geometries in the diamond cubic structure

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1. Dislocation photoluminescence in plastically deformed germanium;Physica B: Condensed Matter;2009-12

2. Dislocation States and Deformation-Induced Point Defects in Plastically Deformed Germanium;Solid State Phenomena;2009-10

3. Photoluminescence in germanium with a quasi-equilibrium dislocation structure;Physics of the Solid State;2007-01

4. A review of the determination of dislocation parameters using strong- and weak-beam electron microscopy;Journal of Microscopy;1989-08

5. The Dissociation of Dislocations in Pure and Doped GaAs Crystals;Physica Status Solidi (a);1989-07-16

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