Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET-Reference-Cited by-同舟云学术

Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET

Published:2021-02-09 Issue:4 Volume:31 Page:
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF Mic Comp-Aid Eng

Author:

Saha Rajesh¹^ORCID,Panda Deepak Kumar²,Goswami Rupam³,Bhowmick Brinda⁴,Baishya Srimanta⁴

Affiliation:

1. Department of Electronics and Communication Engineering Malaviya National Institute of Technology Jaipur Rajasthan India

2. School of Electronics, VIT AP University Amaravati Andhra Pradesh India

3. School of Electronics, Tezpur University Tezpur Assam India

4. Department of Electronics and Communication Engineering National Institute of Technology Silchar Silchar Assam India

Funder

Science and Engineering Research Board

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Link

Reference43 articles.

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