New study of the abnormal behavior of the low temperature dependence of the current in inhomogeneous Schottky diode
Author:
Affiliation:
1. Département des sciences de la matière; Université de Bordj Bou Arreridj; 34000 Algeria
2. Département de physique UFAS Sétif; Laboratoire optoélectronique et composants; Sétif Algeria
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/jnm.2002/fullpdf
Reference40 articles.
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2. Barrier inhomogeneities at Schottky contacts;Werner;J Appl Phys,1991
3. Current-voltage characteristics and I barrier parameters of Pd2Si/p-Si(lll) Schottky diodes in a wide temperature range;Chand;Semicond Sci Tech,1995
4. Barrier characteristics of PtSi/p-Si Schottky diodes as determined from I-V-T measurements;McCafferty;Solid-State Electronics,1996
5. Evidence for the double distribution of barrier heights in Pd2Si/n-Si Schottky diodes from I -V -T measurements;Chand;Semicond Sci Tech,1996
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2. Temperature dependence of the inhomogeneous parameters of the Mo/4H–SiC Schottky barrier diodes;Semiconductor Science and Technology;2016-07-15
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