A study of the transition between growth of stoichiometric and silicon-excess silicon carbide by CVD in the system MTS/H2
Author:
Publisher
Wiley
Subject
Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry
Reference17 articles.
1. Physicochemical properties of SiC-based ceramics deposited by low pressure chemical vapor deposition from CH3SiCl3H2
2. The structure of chemical vapor deposited silicon carbide
3. Growth of silicon carbide by chemical vapour deposition
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