An Advanced Qualitative Model Regarding the Role of Oxygen During POCl3 Diffusion in Silicon
Author:
Affiliation:
1. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales; Kensington NSW 2052 Australia
Funder
Institution of Engineering and Technology
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201700046/fullpdf
Reference25 articles.
1. Effects of high phosphorus concentration on diffusion into silicon;Duffy;J. Electrochem. Soc,1968
2. On the uniformity of phosphorus emitter concentration for shallow diffused transistors;Parekh;J. Electrochem. Soc,1972
3. Kinetics of phosphorus predeposition in silicon using POCl3;Negrini;J. Electrochem. Soc,1975
4. Predeposition in silicon as affected by the formation of orthorhombic SiP and cubic SiO2-P2O5 at the PSG-Si interface;Solmi;J. Electrochem. Soc,1976
5. On models of phosphorus diffusion in silicon;Hu;J. Appl. Phys,1983
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