Analysis of Contact Reaction Phenomenon between Aluminum–Silver and p+ Diffused Layer for n-Type c-Si Solar Cell Applications

Abstract

In this study, the contact mechanism between Ag–Al and Si and the change in contact resistance (Rc) were analyzed by varying the firing profile. The front electrode of an n-type c-Si solar cell was formed through a screen-printing process using Ag–Al paste. Rc was measured by varying the belt speed and peak temperature of the fast-firing furnace. Rc value of 6.98 mΩ-cm−2 was obtained for an optimal fast-firing profile with 865 °C peak temperature and 110 inches per min belt speed. The contact phenomenon and the influence of impurities between the front-electrode–Si interface and firing conditions were analyzed through scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS). The EDS analysis revealed that the peak firing temperature at 865 °C exhibited a low atomic weight percentage of Al (0.72 and 0.36%) because Al was involved in the formation of alloy of Si with the front electrode. Based on the optimal results, a solar cell with a conversion efficiency of 19.46% was obtained.