Tunnel injection emitter structures with barriers comprising nanobridges-Reference-Cited by-同舟云学术

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Tunnel injection emitter structures with barriers comprising nanobridges

Published:2011-09-02 Issue:10-11 Volume:5 Page:385-387
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Senichev Alexander V.,Talalaev Vadim G.,Tomm Jens W.,Zakharov Nikolai D.,Novikov Boris V.,Werner Peter,Cirlin George E.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference13 articles.

1. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

2. Interdot carrier transfer in asymmetric bilayer InAs∕GaAs quantum dot structures

3. Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers

4. Transient carrier transfer in tunnel injection structures

5. High-speed 1.3μm tunnel injection quantum-dot lasers

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature quenching of spontaneous emission in tunnel-injection nanostructures;Semiconductors;2015-11

2. Ex post manipulation of barriers in InGaAs tunnel injection devices;Applied Physics Letters;2015-01-05

3. Effect of nanobridges on the emission spectra of a quantum dot-quantum well tunneling pair;Semiconductors;2014-08-31

4. Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix;Semiconductors;2012-11

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