Ex post manipulation of barriers in InGaAs tunnel injection devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4905467
Reference24 articles.
1. High-speed 1.3μm tunnel injection quantum-dot lasers
2. Long wavelength quantum-dot lasers selectively populated using tunnel injection
3. Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers
4. Tunneling process in AlAs/GaAs double quantum wells studied by photoluminescence
5. Nonresonant electron and hole tunneling times in GaAs/Al0.35Ga0.65As asymmetric double quantum wells
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission;AIP Advances;2017-01
2. Temperature quenching of spontaneous emission in tunnel-injection nanostructures;Semiconductors;2015-11
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