Local Homoepitaxial Growth in Sputtered NiO Thin Films: An Effective Approach to Tune the Crystallization, Preferred Growth Orientation, and Electrical Properties-Reference-Cited by-同舟云学术

Local Homoepitaxial Growth in Sputtered NiO Thin Films: An Effective Approach to Tune the Crystallization, Preferred Growth Orientation, and Electrical Properties

Published:2018-06-28 Issue:9 Volume:12 Page:1800191
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Wang Yong¹²,Ghanbaja Jaafar²,Soldera Flavio³,Boulet Pascal²,Horwat David²,Mücklich Frank³,Pierson Jean-Francois²^ORCID

Affiliation:

1. State Key Laboratory for Environmental-Friendly Energy Materials, Southwest University of Science and Technology; Mianyang 621010 China

2. Institut Jean Lamour, UMR 7198-CNRS, Université de Lorraine; Nancy F-54000 France

3. Department for Materials Science, Functional Materials, Saarland University; Saarbrücken D-66123 Germany

Funder

National Natural Science Foundation of China

Southwest University of Science and Technology

Sichuan Province Youth Science and Technology Innovation Team

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201800191/fullpdf

Reference19 articles.

1. Influence of particle and energy flux on stress and texture development in magnetron sputtered TiN films

2. A structure zone diagram including plasma-based deposition and ion etching

3. Development of preferred orientation in polycrystalline TiN layers grown by ultrahigh vacuum reactive magnetron sputtering

4. Microstructural evolution during film growth

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