Photosensitive Complementary Inverters Based on n‐Channel MoS 2 and p‐Channel MoTe 2 Transistors for Light‐to‐Frequency Conversion Circuits
Author:
Affiliation:
1. Department of Electronic EngineeringIncheon National University Academy-ro, Yeongsu-gu Incheon 22012 Korea
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201900317
Reference27 articles.
1. Metal dichalcogenide nanosheets: preparation, properties and applications
2. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
3. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
4. Single-layer MoS2 transistors
5. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
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