Highly Efficient, Surface Ligand Modified Quantum Dot Light‐Emitting Diodes Driven by Type‐Controllable MoTe 2 Thin Film Transistors via Electron Charge Enhancer-Reference-Cited by-同舟云学术

Highly Efficient, Surface Ligand Modified Quantum Dot Light‐Emitting Diodes Driven by Type‐Controllable MoTe 2 Thin Film Transistors via Electron Charge Enhancer

Published:2021-07-26 Issue:10 Volume:7 Page:2100535
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Baek Geun Woo¹^ORCID,Seo Seung Gi²,Hahm Donghyo³,Bae Wan Ki³,Kwak Jeonghun¹,Jin Sung Hun²^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering Inter‐University Semiconductor Research Center Seoul National University 1, Gwanak‐ro, Gwanak‐gu Seoul 08826 Korea

2. Department of Electronic Engineering Incheon National University Academy‐ro, Yeongsu‐gu Incheon 22012 Korea

3. SKKU Advanced Institute of Nano Technology (SAINT) Sungkyunkwan University Seobu‐ro, Jangan‐gu, Suwon‐si Gyeonggi‐do 16419 Republic of Korea

Funder

Ministry of Science, ICT and Future Planning

Ministry of Education

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

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