Extremely High Contrast Multi-Level Resistance States of In3 SbTe2 Device for High Density Non-Volatile Memory Applications-Reference-Cited by-同舟云学术

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Extremely High Contrast Multi-Level Resistance States of In3 SbTe2 Device for High Density Non-Volatile Memory Applications

Published:2017-08-16 Issue:9 Volume:11 Page:1700227
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Pandey Shivendra K.¹^ORCID,Manivannan Anbarasu¹²^ORCID

Affiliation:

1. Discipline of Electrical Engineering; Indian Institute ; of Technology Indore; Indore 453552 India

2. Metallurgical Engineering and Materials Science; Indian Institute of Technology Indore; Indore 453552 India

Funder

Department of Science and Technology, Government of Kerala

Department of Atomic Energy, Government of India

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201700227/fullpdf

Reference27 articles.

1. Towards a universal memory?

2. Breaking the Speed Limits of Phase-Change Memory

3. Low-cost and nanoscale non-volatile memory concept for future silicon chips

4. Phase Change Memory

5. Phase change materials: Chalcogenides with remarkable properties due to an unconventional bonding mechanism

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1. Influence of HfO₂ oxide layer on crystallization properties of In₃SbTe₂ phase change material;Physica Scripta;2024-08-14

2. Low‐Power Crystallization Process in In₃SbTe₂ Phase Change Memory Devices with Thin Oxide Layer;physica status solidi (b);2024-03-18

3. Multistage smart radiator with gradient emittance based on phase change materials VO2/GST/IST;Applied Physics Letters;2024-01-01

4. Tunable metasurfaces enabled by phase-change materials;Semiconductors and Semimetals;2024

5. Non-volatile tunable optics by design: From chalcogenide phase-change materials to device structures;Materials Today;2023-09

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