Author:
Fallica Roberto,Varesi Enrico,Fumagalli Luca,Spadoni Simona,Longo Massimo,Wiemer Claudia
Subject
Condensed Matter Physics,General Materials Science
Reference28 articles.
1. Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node and beyond
2. H. Horii J. H. Yi J. H. Park Y. H. Ha I. G. Baek S. O. Park VLSI Symposium 2003, p. 177.
3. The Phase Change Effect of Oxygen-Incorporation in GeSbTe Films
4. Tuning the Crystallization Temperature of Amorphous Ge[sub 2]Sb[sub 2]Te[sub 5] by O and Si Recoil Implantation
5. A. Fantini V. Sousa L. Perniola E. Gourvest J. C. Bastien S. Maitrejean S. Braga N. Pashkov A. Bastard B. Hyot A. Roule A. Persico H. Feldis C. Jahan J. F. Nodin D. Blachier A. Toffoli G. Reimbold F. Fillot F. Pierre R. Annunziata D. Benshael P. Mazoyer C. Vallée T. Billon J. Hazart B. De Salvo F. Boulanger Electron Devices Meeting (IEDM), 2010 IEEE International, 6-8 Dec. 2010.
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