A novel source of atomic hydrogen for passivation of defects in silicon
Author:
Affiliation:
1. Department of Materials; The University of Oxford; OX1 3PH Oxford UK
2. School of Photovoltaic and Renewable Energy Engineering; The University of New South Wales; Kensington, NSW 2052 Australia
Funder
Engineering and Physical Sciences Research Council
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201600448/fullpdf
Reference26 articles.
1. Defect passivation of industrial multicrystalline solar cells based on PECVD silicon nitride
2. Bulk and surface passivation of silicon solar cells accomplished by silicon nitride deposited on industrial scale by microwave PECVD
3. Advanced Hydrogenation of Dislocation Clusters and Boron-oxygen Defects in Silicon Solar Cells
4. Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO 2 layers
5. Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics
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