Monolayer-Trilayer Lateral Heterostructure Based Antimonene Field Effect Transistor: Better Contact and High On/Off Ratios-Reference-Cited by-同舟云学术

Monolayer-Trilayer Lateral Heterostructure Based Antimonene Field Effect Transistor: Better Contact and High On/Off Ratios

Published:2018-03-24 Issue:5 Volume:12 Page:1800038
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Chen Jianyong¹²³,Yang Zhixiong²,Zhou Wenzhe¹,Zou Hui¹,Li Mingjun¹,Ouyang Fangping²³^ORCID

Affiliation:

1. School of Physics and Electronics, Institute of Super-microstructure and Ultrafast Process in Advanced Materials, Central South University; Changsha 410083 P. R. China

2. Powder Metallurgy Research Institute, State Key Laboratory of Powder Metallurgy, Central South University; Changsha 410083 P. R. China

3. Faculty of Science, Guilin University of Aerospace Technology; Guilin 541004 P. R. China

Funder

National Natural Science Foundation of China

Key Research and development program of Hunan Province

Young Scholar Foundation of Hunan Province

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference29 articles.

1. Temperature-Dependent Transport in Suspended Graphene

2. Single-layer MoS2 transistors

3. Atomically Thin Arsenene and Antimonene: Semimetal-Semiconductor and Indirect-Direct Band-Gap Transitions

4. Performance of arsenene and antimonene double-gate MOSFETs from first principles

5. The electronic and optical properties of novel germanene and antimonene heterostructures

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