Analysis of GaN based high-power diode lasers after singular degradation events

Author:

Mura Giovanna1,Vanzi Massimo1,Hempel Martin2,Tomm Jens W.2

Affiliation:

1. Department of Electrical and Electronic Engineering; University of Cagliari; 09124 Cagliari Italy

2. Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie; Max Born Str. 2A Berlin 12489 Germany

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. GaN based ultraviolet laser diodes;Journal of Semiconductors;2024-01-01

2. Investigation of degradation mechanism in GaN-based blue and ultraviolet laser diodes;Journal of Applied Physics;2023-09-01

3. Catastrophic Optical Damage in Semiconductor Lasers: Physics and New Results on InGaN High‐Power Diode Lasers;physica status solidi (RRL) – Rapid Research Letters;2021-12-13

4. New mechanisms of cavity facet degradation for GaN-based laser diodes;Journal of Applied Physics;2021-06-14

5. Laser Diode Reliability;Advanced Laser Diode Reliability;2021

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