Low energy scanning transmission electron beam induced current for nanoscale characterization of p-n junctions-Reference-Cited by-同舟云学术

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Low energy scanning transmission electron beam induced current for nanoscale characterization of p-n junctions

Published:2016-11-29 Issue:1 Volume:11 Page:1600358
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Peretzki Patrick¹,Ifland Benedikt²,Jooss Christian²,Seibt Michael¹

Affiliation:

1. 4th Physical Institute - Solids and Nanostructures, Georg-August-University Göttingen; Friedrich-Hund-Platz 1 37077 Göttingen Germany

2. Institute of Material Physics, Georg-August-University Göttingen; Friedrich-Hund-Platz 1 37077 Göttingen Germany

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Charge collection scanning electron microscopy

2. An analytical model of SEM and STEM charge collection images of dislocations in thin semiconductor layers: I. Minority carrier generation, diffusion, and collection

3. Evaluation of p-n Junction Position and Channel Length in Si Devices with Resolution of a Few Nanometers by Low-Energy EBIC

4. Application of scanning transmission electron microscopy to semiconductor devices

5. From atomic structure to photovoltaic properties in CdTe solar cells

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recombination and Charge Collection at Nickel Silicide Precipitates in Silicon Studied by Electron Beam‐Induced Current;physica status solidi (b);2021-07-08

2. High-resolution Scanning Transmission EBIC Analysis of Misfit Dislocations at Perovskite pn-Heterojunctions;Journal of Physics: Conference Series;2019-05-01

3. Contribution of Jahn-Teller and charge transfer excitations to the photovoltaic effect of manganite/titanite heterojunctions;New Journal of Physics;2017-06-30

4. Microscopic electronic and structural analysis of femtosecond laser sulfur hyperdoped silicon;physica status solidi (a);2017-06-07

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