Enhanced Responsivity of ZnSe-Based Metal-Semiconductor-Metal Near-Ultraviolet Photodetector via Impact Ionization-Reference-Cited by-同舟云学术

Enhanced Responsivity of ZnSe-Based Metal-Semiconductor-Metal Near-Ultraviolet Photodetector via Impact Ionization

Author:

Sirkeli Vadim P.¹²^ORCID,Yilmazoglu Oktay³,Hajo Ahid S.¹,Nedeoglo Natalia D.⁴,Nedeoglo Dmitrii D.⁴,Preu Sascha¹,Küppers Franko¹,Hartnagel Hans L.¹

Affiliation:

1. Institut für Mikrowellentechnik und Photonik, Technische Universität Darmstadt; Merckstraße 25 64283 Darmstadt Germany

2. Department of Information Technologies, Mathematics and Physics Comrat State University; Galatsan Street 17 MD-3800 Comrat Moldova

3. Department of High Frequency Electronics Technische Universität Darmstadt; Merckstraße 25 64283 Darmstadt Germany

4. Faculty of Physics and Engineering Moldova State University; A. Mateevici Street 60 MD-2009 Chisinau Moldova

Funder

Alexander von Humboldt Foundation

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference13 articles.

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