Investigation of electron delay in the base on noise performance in InGaP heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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Investigation of electron delay in the base on noise performance in InGaP heterojunction bipolar transistors

Published:2010-09-10 Issue:11 Volume:4 Page:335-337
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:phys. stat. sol. (RRL)

Author:

Shimukovitch A.,Sakalas P.,Zampardi P.,Schroter M.,Matulionis A.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference12 articles.

1. K. Hosoya in: Proceedings 33 rd European Microwave Conference, 2003, pp. 627-630.

2. Monolithic InGaP-GaAs HBT receiver front-end with 6 mW DC power consumption for 5 GHz band WLAN applications

3. H. G. Liu in: Proceedings IEEE International Electron Devices Meeting, 2007, pp. 667-670.

4. Minority electron transport in InP/InGaAs heterojunction bipolar transistors

5. Nonequilibrium electron transport in HBTs

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. mm-Wave noise modeling in advanced SiGe and InP HBTs;Journal of Computational Electronics;2015-02-13

2. Spectroscopic Ellipsometry for Inline Process Control in the Semiconductor Industry;Ellipsometry at the Nanoscale;2013

3. Systematic Compact Modeling of Correlated Noise in Bipolar Transistors;IEEE Transactions on Microwave Theory and Techniques;2012-11

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