The work function of hydrothermally synthesized UO2and the implications for semiconductor device fabrication-Reference-Cited by-同舟云学术

The work function of hydrothermally synthesized UO2and the implications for semiconductor device fabrication

Published:2016-08-24 Issue:9 Volume:10 Page:687-690
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Young Christopher¹,Petrosky James²,Mann J. Matthew³,Hunt Eric M.³,Turner David²,Kelly Tony¹

Affiliation:

1. Department of Engineering Physics, Air Force Institute of Technology; 2950 Hobson Way, Wright-Patterson Air Force Base OH 45433-7765 Wright-Patterson USA

2. Air Force Research Laboratory, Wright-Patterson Air Force Base; OH 45433-7765 Wright-Patterson USA

3. Oak Ridge Institute for Science and Education; Oak Ridge TN USA

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference19 articles.

1. The unoccupied electronic structure characterization of hydrothermally grown ThO2single crystals

2. B. von Roedern T. Meek M. Haire Some electrical properties of ion-implanted urania - Part II in: Symposium of the Society for the Advancement of Material Process Engineering (SAMPE) Long Beach

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