Comparison of batch and in-line PECVD of a-Si:H passivation layers for silicon heterojunction solar cells-Reference-Cited by-同舟云学术

Comparison of batch and in-line PECVD of a-Si:H passivation layers for silicon heterojunction solar cells

Published:2016-10 Issue:10 Volume:10 Page:725-729
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Landheer Kees¹,Kaiser Monja²,Poulios Ioannis¹,Dörenkämper Maarten³,Soppe Wim J.³,Schropp Ruud E. I.⁴,Rath Jatin K.¹

Affiliation:

1. Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science-Physics of Devices; High Tech Campus 21 5656 AE Eindhoven The Netherlands

2. Philips Innovation Services; High Tech Campus 11 5656 AE Eindhoven The Netherlands

3. ECN - Solliance; High Tech Campus 21 5656 AE Eindhoven The Netherlands

4. Eindhoven University of Technology, Department of Applied Physics, Plasma and Materials Processing; P.O. Box 513 5600 MB Eindhoven The Netherlands

Funder

Dutch foundation for technical sciences

TEM facility

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201600256/fullpdf

Reference19 articles.

1. Impact of carrier recombination on fill factor for large area heterojunction crystalline silicon solar cell with 25.1% efficiency

2. Deposition of highly efficient microcrystalline silicon solar cells under conditions of low H2 dilution: the role of the transient depletion induced incubation layer

3. Highly efficient microcrystalline silicon solar cells deposited from a pure SiH4 flow

4. Fast equilibration of silane/hydrogen plasmas in large area RF capacitive reactors monitored by optical emission spectroscopy

5. High deposition rate nanocrystalline silicon with enhanced homogeneity

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3. Inline PECVD Deposition of Poly-Si-Based Tunnel Oxide Passivating Contacts;physica status solidi (a);2018-09-09