Numerical modeling of photovoltaic efficiency of n-type GaN nanowires on p-type Si heterojunction-Reference-Cited by-同舟云学术

Numerical modeling of photovoltaic efficiency of n-type GaN nanowires on p-type Si heterojunction

Published:2015-09 Issue:9 Volume:9 Page:507-510
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Mozharov A.¹,Bolshakov A.¹,Cirlin G.¹²³⁴,Mukhin I.¹⁵

Affiliation:

1. St. Petersburg Academic University; 194021 St. Petersburg Russia

2. Institute for Analytical Instrumentation RAS; 190103 St. Petersburg Russia

3. St. Petersburg State University; 199034 St. Petersburg Russia

4. St. Petersburg State Polytechnical University; 195251 St. Petersburg Russia

5. ITMO University; 197101 St. Petersburg Russia

Funder

Department for Nanotechnologies and Information Technologies of the Russian Academy of Sciences, President grant

Russian Foundation for Basic Research

leading universities of the Russian Federation

Skolkovo Foundation

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201510241/fullpdf

Reference20 articles.

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2. Fraunhofer ISE: Photovoltaics Report (2014)

3. V. P. Afanasev E. I. Terulov A. A. Sherchenkov Thin Layers Solar Cell Based on Silicon (SPSETU, St. Petersburg, 2011), p. 168 (in Russian)

4. Panasonic HIT ® Solar Cell Achieves World's Highest Energy Conversion Efficiency of 25.65% at Research Level http://news.panasonic.com/press/news/official.data/data.dir/2014/04/en140410-4/en140410-4.html

5. 24·5% Efficiency silicon PERT cells on MCZ substrates and 24·7% efficiency PERL cells on FZ substrates

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