Single GaN Nanowires for Extremely High Current Commutation-Reference-Cited by-同舟云学术

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Single GaN Nanowires for Extremely High Current Commutation

Published:2021-02-05 Issue:4 Volume:15 Page:2000590
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Shugurov Konstantin¹^ORCID,Mozharov Alexey¹,Sapunov Georgiy¹,Fedorov Vladimir¹,Tchernycheva Maria²,Mukhin Ivan¹³

Affiliation:

1. The Laboratory of Renewable Energy Sources Alferov University (former St Petersburg Academic University) Khlopina 8/3 194021 St. Petersburg Russia

2. Centre de Nanosciences et de Nanotechnologies (C2N) UMR 9001 CNRS Université Paris Saclay Boulevard Thomas Gobert 10 91120 Palaiseau France

3. Solution Chemistry of Advanced Materials and Technologies ITMO University Kronverkskij 49 197101 St. Petersburg Russia

Funder

Russian Foundation for Basic Research

Russian Science Foundation

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202000590

Reference37 articles.

1. L. F. S.Alves R. C. M.Gomes P.Lefranc R. De A.Pegado P.-O.Jeannin B. A.Luciano F. V.Rocha in2017 Brazilian Power Electronics Conf. (COBEP) IEEE Piscataway NJ USA2017 https://doi.org/10.1109/COBEP.2017.8257396.

2. Commercial GaN-Based Power Electronic Systems: A Review

3. Very High Frequency Silicon Nanowire Electromechanical Resonators

4. Large-Scale Integration of Semiconductor Nanowires for High-Performance Flexible Electronics

5. High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extremely high frequency Schottky diodes based on single GaN nanowires;Nanotechnology;2023-03-30

2. Porous Semiconductor Compounds with Engineered Morphology as a Platform for Various Applications;physica status solidi (RRL) – Rapid Research Letters;2023-03-25

3. Flexible Perovskite CsPbBr3 Light Emitting Devices Integrated with GaP Nanowire Arrays in Highly Transparent and Durable Functionalized Silicones;The Journal of Physical Chemistry Letters;2021-09-30

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