Fast and slow lifetime degradation in boron-doped Czochralski silicon described by a single defect-Reference-Cited by-同舟云学术

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Fast and slow lifetime degradation in boron-doped Czochralski silicon described by a single defect

Published:2016-06-13 Issue:7 Volume:10 Page:520-524
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Hallam Brett¹,Abbott Malcolm¹,Naerland Tine²³,Wenham Stuart¹

Affiliation:

1. School of Photovoltaic and Renewable Energy Engineering; University of New South Wales; 2052 Sydney Australia

2. Institute for Energy Technology; Instituttveien 18 2007 Kjeller Norway

3. Ira A. Fulton Schools of Engineering; Arizona State University; Tempe AZ 85287 USA

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference27 articles.

1. S. Rein T. Rehrl W. Warta S. Glunz G. Willeke Proceedings of the 17th European PVSEC (2002), p. 1555

2. Electronically activated boron-oxygen-related recombination centers in crystalline silicon

3. Electrical characterization of the slow boron oxygen defect component in Czochralski silicon

4. Lifetime-degrading boron-oxygen centres in p-type and n-type compensated silicon

5. (Invited) Boron-Oxygen Related Lifetime Degradation in p-type and n-type Silicon

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4. Defect concentration and Δn change in light- and elevated temperature-induced degradation;Journal of Physics D: Applied Physics;2021-11-16

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