The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes-Reference-Cited by-同舟云学术

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The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes

Published:2010-06-08 Issue:8-9 Volume:4 Page:194-196
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:phys. stat. sol. (RRL)

Author:

Ni X.,Li X.,Lee J.,Liu S.,Avrutin V.,Özgür Ü.,Morkoç H.,Matulionis A.,Paskova T.,Mulholland G.,Evans K. R.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference9 articles.

1. H. Morkoç Handbook of Nitride Semiconductors and Devices, Volume 3 (Wiley-VCH, Weinheim, 2008).

2. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

3. Origin of efficiency droop in GaN-based light-emitting diodes

4. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

5. On carrier spillover in c- and m-plane InGaN light emitting diodes

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1. Theoretical background of electron tunneling in electrochemical double layer;AIP Advances;2023-07-01

2. Modified Shockley Equation for GaInN-Based Light-Emitting Diodes: Origin of the Power- Efficiency Degradation Under High Current Injection;IEEE Journal of Quantum Electronics;2019-08

3. V-shaped semipolar InGaN/GaN multi-quantum-well light-emitting diodes directly grown on c-plane patterned sapphire substrates;physica status solidi (a);2017-06-16

4. Group III Nitrides;Springer Handbook of Electronic and Photonic Materials;2017

5. Effects of GaN barrier thickness on built-in electric field and internal quantum efficiency of blue InGaN/GaN multiple quantum wells LED structures;Japanese Journal of Applied Physics;2016-04-22

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