Influence of precursor gas ratio and firing on silicon surface passivation by APCVD aluminium oxide-Reference-Cited by-同舟云学术

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Influence of precursor gas ratio and firing on silicon surface passivation by APCVD aluminium oxide

Published:2013-09-02 Issue:11 Volume:7 Page:942-945
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Davis Kristopher O.,Jiang Kaiyun,Wilson Marshall,Demberger Carsten,Zunft Heiko,Haverkamp Helge,Habermann Dirk,Schoenfeld Winston V.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference26 articles.

1. On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

2. Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

3. Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells

4. High efficiency n-type Si solar cells on Al2O3-passivated boron emitters

5. SCHMID-Group press release

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1. Multiscale Characterization of Photovoltaic Modules—Case Studies of Contact and Interconnect Degradation;IEEE Journal of Photovoltaics;2022-01

2. Ultrathin Aluminum Oxide Films Induced by Rapid Thermal Annealing for Effective Silicon Surface Passivation;physica status solidi (RRL) – Rapid Research Letters;2021-08-11

3. Phosphorus-doped polysilicon passivating contacts deposited by atmospheric pressure chemical vapor deposition;Journal of Physics D: Applied Physics;2021-07-09

4. Spatially resolved characterization of optical and recombination losses for different industrial silicon solar cell architectures;International Journal of Modern Physics B;2020-08-20

5. Spatial Atomic Layer Deposition of Aluminum Oxide as a Passivating Hole Contact for Silicon Solar Cells;physica status solidi (a);2020-08-02

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