Growth behavior of Bi2Te3and Sb2Te3thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition-Reference-Cited by-同舟云学术

Growth behavior of Bi2Te3and Sb2Te3thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition

Published:2017-01-25 Issue:3 Volume:11 Page:1600369
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Lee Chang Wan¹²,Kim Gun Hwan¹,Kang Seong Gu³,Kang Min-A¹,An Ki-Seok¹,Kim Hyungjun²,Lee Young Kuk¹

Affiliation:

1. Thin Film Materials Research Group, Korea Research Institute of Chemical Technology; 141 Gajeong-ro Yuseong-Gu, Daejeon 34114 Republic of Korea

2. School of Electrical and Electronic Engineering, Yonsei University; 50 Yonsei-ro Seodaemun-Gu, Seoul 03722 Republic of Korea

3. School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology; 123 cheomdankwagi-ro Buk-Gu, Gwangju 61005 Republic of Korea

Funder

Korea Research Institute of Chemical Technology

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Van der Waals heterostructures

2. Graphene-Like Two-Dimensional Materials

3. Complex thermoelectric materials

4. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

5. Thin-film thermoelectric devices with high room-temperature figures of merit

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