Direct Deposition of (BixSb1–x)2Te3 Nanosheets on Si/SiO2 Substrates by Chemical Vapor Transport-Reference-Cited by-同舟云学术

Direct Deposition of (Bi_xSb_1–x)₂Te₃ Nanosheets on Si/SiO₂ Substrates by Chemical Vapor Transport

Published:2022-03-14 Issue:4 Volume:22 Page:2354-2363
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Hansen Felix¹^ORCID,Fucke Rico¹,Charvin Titouan¹,Froeschke Samuel¹,Wolf Daniel¹^ORCID,Giraud Romain¹²,Dufouleur Joseph¹^ORCID,Gräßler Nico¹^ORCID,Büchner Bernd¹³,Schmidt Peer⁴^ORCID,Hampel Silke¹

Affiliation:

1. Leibniz Institute for Solid State and Materials Research Dresden, Helmholtzstraße 20, 01069 Dresden, Germany

2. Université Grenoble Alpes, CNRS, CEA, Grenoble-INP, SPINTEC, 38000 Grenoble, France

3. Technische Universität Dresden, Helmholtzstraße 10, 01069 Dresden, Germany

4. Brandenburg University of Technology Cottbus − Senftenberg, Universitätsplatz 1, 01968 Senftenberg, Germany

Funder

European Commission

W?rzburg-Dresden Cluster of Excellence on Complexity and Topology in Quantum Matter - ct.qmat

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.1c01446

Reference31 articles.

1. Topological insulators and superconductors

2. Anti-site defect effect on the electronic structure of a Bi2Te3 topological insulator

3. The birth of topological insulators

4. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

5. Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2 Te 3

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