Variation of source gate workfunction on the performance of dual material gate rectangular recessed channel SOI‐MOSFET-Reference-Cited by-同舟云学术

Variation of source gate workfunction on the performance of dual material gate rectangular recessed channel SOI‐MOSFET

Published:2018-09-06 Issue:1 Volume:32 Page:e2487
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numer Model

Author:

Mishra Sikha¹,Bhanja Urmila²,Mishra Guru Prasad¹^ORCID

Affiliation:

1. Device Simulation Laboratory, Department of Electronics and Communication EngineeringInstitute of Technical Education and Research, Siksha 'O' Anusandhan (Deemed to be University) Khandagiri Bhubaneswar India

2. Department of Electronics and Telecommunication EngineeringIGIT, Saranga Dhenkanal India

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.2487

Reference29 articles.

1. Scaling theory for double-gate SOI MOSFET's

2. CMOS scaling into the nanometer regime

3. Device scaling limits of Si MOSFETs and their application dependencies;Frank DJ;ProcIEEE,2001

4. Short-channel effect in fully depleted SOI MOSFETs

5. Short-channel effects in SOI MOSFETs

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved post-radiation behavior of FinFET based CMOS with workfunction modulated gate;Physica Scripta;2024-03-28

2. Effect of Defects on the Switching Performance of Silicon-Gate All Around Dielectric Window Spaced-Multi-channel MOSFET;Silicon;2024-02-29

3. Gate electrode stacked source/drain SON trench MOSFET for biosensing application;Physica Scripta;2023-11-30

4. Total ionizing dose effect of bulk and SOI P-FinFET with linear workfunction modulation technology;Microelectronics Journal;2023-07

5. Analysis of total ionizing dose response of optimized fin geometry workfunction modulated SOI-FinFET;Microelectronics Reliability;2022-07