P-26: High Capacity Memory using Oxide Based Schottky Diode and Unipolar Resistive Array-Reference-Cited by-同舟云学术

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P-26: High Capacity Memory using Oxide Based Schottky Diode and Unipolar Resistive Array

Published:2015-06 Issue:1 Volume:46 Page:1213-1216
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Fan Yang-Shun¹,Chang Chih-Hsiang¹,Zheng Guang-Ting²,Chang Che-Chia³,Liu Po-Tsun⁴

Affiliation:

1. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan, 300, R.O.C.

2. Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, 300, R.O.C.

3. Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, 300, R.O.C.

4. Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu, Taiwan, 300, R.O.C.

Publisher

Wiley

Reference12 articles.

1. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*

2. Present status of amorphous In–Ga–Zn–O thin-film transistors

3. Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature

4. Impact of device configuration on the temperature instability of Al–Zn–Sn–O thin film transistors

5. Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications

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