Chemical inhomogeneity of SiOxdissociation by catalytic Au at a relatively low temperature-Reference-Cited by-同舟云学术

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Chemical inhomogeneity of SiOxdissociation by catalytic Au at a relatively low temperature

Published:2016-07-08 Issue:3 Volume:49 Page:161-164
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Sharma Manoj K.¹,Lee Kyoung-Jae²,Ihm Kyuwook¹

Affiliation:

1. Pohang Accelerator Laboratory; Pohang Kyungbuk 790784 Korea

2. Samsung Electronics; Samsungjeonja-ro Hwaseong-si Gyeonggi-do 445701 Korea

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference41 articles.

1. Influence of Interfacial Mixing on Thermal Boundary Conductance Across a Chromium/Silicon Interface

2. Energy dissipation and transport in nanoscale devices

3. Two-Dimensional Self-Assembled Gold Silicide Honeycomb Nanonetwork on Si(111)7×7

4. The structure and growth process of Au/Si(111) analyzed by high-resolution ion scattering coupled with photoelectron spectroscopy

5. Photoemission studies of atomic redistribution at gold–silicon and aluminum–silicon interfaces

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