Enhanced Energy Storage Properties in Paraelectrics via Entropy Engineering

Author:

Lan Shun1ORCID,Meng Fanqi1,Yang Bingbing12,Wang Yue1,Liu Yiqian1,Dou Lvye1,Yang Letao1,Pan Hao3,Kong Xi1,Ma Jing1,Shen Yang1,Nan Ce‐Wen1,Lin Yuan‐Hua1ORCID

Affiliation:

1. State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 P. R. China

2. Foshan (Southern China) Institute for New Materials Foshan 528200 P. R. China

3. Department of Materials Science and Engineering University of California Berkeley CA 94720 USA

Abstract

AbstractElectrostatic energy storage capacitors based on dielectrics have attracted much attention due to their wide applications in advanced electrical technology and electronic devices. Generally, high energy density is achieved at a high electric field, while conduction loss becomes nonnegligible, which harms practical applications. Here distinctly suppressed leakage current in BaZr0.5Ti0.5O3‐based films by entropy engineering is realized. With increased entropy, the leakage current density decreases by two orders of magnitude at the electric field of 3 MV cm−1, leading to a markedly improved energy efficiency of 87% at an ultrahigh breakdown strength of 8 MV cm−1 in high‐entropy films. Thereby, a high energy density of 51.9 J cm−3 is achieved. This work demonstrates the effectiveness of entropy engineering in improving the breakdown strength of dielectric films and shows great potential in enhancing the energy storage performance of capacitors.

Funder

National Natural Science Foundation of China

Publisher

Wiley

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