Amorphous In-Ga-Zn-O thin-film transistors prepared by magnetron sputtering using Kr and Xe instead of Ar-Reference-Cited by-同舟云学术

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Amorphous In-Ga-Zn-O thin-film transistors prepared by magnetron sputtering using Kr and Xe instead of Ar

Published:2013-12 Issue:12 Volume:21 Page:517-523
ISSN:1071-0922
Container-title:Journal of the Society for Information Display
language:en
Short-container-title:Jnl Soc Info Display

Author:

Goto Tetsuya¹,Sugawa Shigetoshi¹,Ohmi Tadahiro¹

Affiliation:

1. New Industry Creation Hatchery Center; Tohoku University; Sendai 980-8579 Japan

Funder

JSPS Grant-in-Aid for Young Scientists

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jsid.210/fullpdf

Reference23 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,2004

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering;Yabuta;Hosono Appl. Phys. Lett.,2006

3. Application of DC Magnetron Sputtering to Deposition of InGaZnO Films for Thin Film Transistor Devices;Moon;Jpn. J. Appl. Phys.,2009

4. Present status of amorphous In-Ga-Zn-O thin-film transistors;Kamiya;Sci. Technol. Adv. Mater.,2010

5. Improvement of Gate Oxide reliability for Tantalum-Gate MOS Devices Using Xenon Plasma Sputtering Technology;Ushiki;Electron Devices,1998

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fluorine-Induced Electric Field Gradient in 3D Porous Aromatic Frameworks for Highly Efficient Capture of Xe and F-Gases;ACS Applied Materials & Interfaces;2022-07-22

2. Solution-Processed Hybrid Ambipolar Thin-Film Transistors Fabricated at Low Temperature;Electronic Materials Letters;2019-04-09

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