Large-signal model predicts dynamic behavior of GaAs MESFET model under optical illumination-Reference-Cited by-同舟云学术

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Large-signal model predicts dynamic behavior of GaAs MESFET model under optical illumination

Published:2001-02-23 Issue:1 Volume:29 Page:25-31
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Zamanillo J. M.,Navarro C.,Pérez-Vega C.,Mediavilla A.,Tazón A.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Analytical model for optically generated currents in GaAs MESFETs;Madjar;IEEE Trans Microwave Theory Tech,1992

2. Modelling the GAAS MESFET's response to modulated light at radio and microwave frequencies;Paolella;IEEE Trans Microwave Theory Tech,1994

3. E.F. Calandra G. Sirna CAD-oriented modeling of the optically-controlled GaAs MESFET 401 404

4. A novel FET model including an illumination-intensity parameter for simulation of optically controlled millimeter-wave oscillators;Kawasaki;IEEE Trans Microwave Theory Tech,1998

5. Extracting a bias-dependent large signal MESFET model from I/V measurements;Fernández;IEEE Trans Microwave Theory Tech,1996

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Large-signal model for microwave FETs under CW laser stimulation;International Journal of RF and Microwave Computer-Aided Engineering;2005

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