Novel method to determine base resistance in sige HBT from small-signalS-parameters measurement-Reference-Cited by-同舟云学术

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Novel method to determine base resistance in sige HBT from small-signalS-parameters measurement

Published:2017-01-26 Issue:3 Volume:59 Page:555-560
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Sun Yabin¹,Fu Jun²,Wang Yudong²,Zhou Wei²,Li Xiaojin¹,Shi Yanling¹

Affiliation:

1. Department of Electrical Engineering, Shanghai Key Laboratory of Multidimensional Information Processing; East China Normal University; Shanghai 200241 People's Republic of China

2. Tsinghua National Laboratory for Information and Technology; Institute of Microelectronics, Tsinghua University; Beijing 100084 People's Republic of China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Consistent modeling and power gain analysis of microwave SiGe HBTs in CE and CB configurations;Alvarez-Botero;IEEE Trans Microw Theory Technol,2015

2. A 6-20 GHz adaptive SiGe image reject mixer for a self-healing receiver;Saha;IEEE J Solid-State Circuit,2012

3. The total-dose-effects of gamma and proton irradiations on high-voltage silicon-germanium heterojunction bipolar transistors;Sun;Radiat Effect Defect Solids,2013

4. Bias dependence of ionizing radiation damage in SiGe HBTs at different dose rates;Sun;Phys B,2014

5. Compact Hierarchical Bipolar Transistor Modeling With HiCUM

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